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Bulgarian Journal of Physics
Print: 1310-0157 Online: 1314-2666
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RECOGNIZED BY THE EUROPEAN PHYSICAL SOCIETY 
Bulg. J. Phys. vol.27 no.2 (2000), pp. 076-079
Excimer Laser Annealing of Silicon Films
S. Friligkos1, M. Miyasaka2, J. Stoemenos1
1Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece
2Seiko Epson Corporation, Base Technology Research Center, Owa 3-3-5, Suwa, Nagano 392-8502, Japan
go back1Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece
2Seiko Epson Corporation, Base Technology Research Center, Owa 3-3-5, Suwa, Nagano 392-8502, Japan
Abstract. Amorphous silicon layers 50 nm thick were crystallized into polysilicon films by: a) excimer laser annealing (ELA), and b) a combination of solid phase crystallization (SPC) and subsequent ELA. Thin film transistors (TFTs) were then formed on fused quartz glass by a standard low temperature process (T < 600℃). The performance of the two groups of the resultant TFTs was compared. Their electrical properties were studied in correlation with the structural characteristics of the active polysilicon layers using transmission electron microscopy (TEM) and x-ray diffraction. The SPC films consist of large but heavily defected grains, the defects being mainly microtwins. These defects can be eliminated by the combination of melting and solidification taking place during the ELA process, when the laser energy density (LED) is between 280 and 360 mjcm-2.