Bulg. J. Phys. vol.27 no.2 (2000), pp. 072-075


Radiative Recombination Centers in GaTe

H.S. Güder, B. Abay, H. Efeoğlu, Y.K. Yoğurtçu
Atatürk University, Faculty of Science & Arts, Department of Physics, 25240 Erzurum, Turkey
Abstract. Radiative recombination mechanisms in GaTe have been investigated by low temperature and temperature dependent photoluminescence (PL) measurements. Three emission bands have been observed located at 1.781 (A-band), 1.735 (B-band) and 1.575 eV (C-band) in the 1.5–1.8 eV energy region at 10 K. A- and B-bands have been found to be strongly dependent on temperature while C-band has been weakly dependent. The radiative recombination mechanisms of the A-, B- and C-bands have been associated with the direct free exciton, band-acceptor and donor-acceptor pair (OAP) transitions from the temperature dependences of the PL intensities and peak energies of the bands.

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