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Bulgarian Journal of Physics
Print: 1310-0157 Online: 1314-2666
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RECOGNIZED BY THE EUROPEAN PHYSICAL SOCIETY 
Bulg. J. Phys. vol.17 no.4 (1990), pp. 330-339
Effect of High Temperature Treatments on the Morphology and Structure of Silicon Nitride Layers
V.B. Lazarova1, G.D. Beshkov2, M.G. Mikhailov2, M.G. Kamenova1
1Institute of Microelectronics, 7 km, Sofia 1784
2Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Lenin blvd., Sofia 1784, Bulgaria
go back1Institute of Microelectronics, 7 km, Sofia 1784
2Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Lenin blvd., Sofia 1784, Bulgaria
Abstract. The effect of high temperature annealing on the morphology and structure of silicon nitride dielectric layers is studied. As a result of such treatments a crystal phase is formed in the amorphous matrix. Its presence is proved by the replicas obtained and the electronograms of the experimental samples.