Accepted Paper


Electronic Properties of Rare Earth Intermetallic Chalcogenides under Effect of Pressure

Dipak Raj Adhikari1, Shiva Prasad Bara2,3, Shesh Kant Adhikari4
1Central Department of Physical and Mathematical Sciences, Graduate School of Science and Technology, Mid-West University, Birendranagar, Surkhet, Nepal
2Central Department of Physics, Tribhuvan University, Kirtipur, Kathmandu, Nepal
3Department of Physics, Amrit Campus, Tribhuvan University, Nepal
4Department of Physics, Birendra Multiple Campus, Tribhuvan University, Nepal
Abstract. In this present paper, we have investigated and evaluated the electronic and structural properties of mixed rare earth chalcogenides (SmSexTe1-x) and rare earth intermetallic chalcogenides (SmxYb1-xTe) using Vegard's law under the effect of pressure (0.0 to 2.0 GPa). We have presented the expressions relating the lattice constant and activation energy with carrier effective mass and dielectric constant of given compound for different concentration (x). The lattice constant decreases or increases with increasing Se or Sm concentration. The activation energy of (SmSexTe1-x)$ increases while that of (SmxYb1-xTe) decreases on increasing Se and Sm concentration respectively. At ambient pressure carrier effective mass exhibit linearly increases with Se concentration except pressure 0.5-2.0 GPa. The carrier effective mass of (SmxYb1-xTe) predicted that the linearly decreases with Sm concentration at lower pressure while increases as same trend at higher pressure. Finally, change in dielectric constant with concentration have shown decreases at lower pressure and increases at higher pressure for (SmSexTe1-x) while only increases for (SmxYb1-xTe) at all pressure. We have implemented modified relation on carrier effective mass and activation energy to obtain their respective result.

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