Abstract. The resistivity layers of NbB₂, TaB₂, HfB₂, ZrB₂ and TiB₂ more than 600-700 Å thick have a high specific resistivity and low negative TCR. In the 4.2-363 K range with decreasing temperature the variation of the resistivity with temperature passes from linear into power dependence and for the lowest temperature region for some of the layers it is logarithmic. The variation of the resistivity ΔR/R is studied for layers treated thermally in air up to 325°C and the stability of thin layer resistors in long duration tests. General analytic expressions are derived and they describe the time-temperature dependence of ΔR/R. This dependence can be used to predict the stability under certain exploitation conditions.

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