Abstract. The transverse magneloresistance (TMR) was measured as a funclion of magnetic field (B) over a small range of temperature (85-91.9 K) for n-type silicon crystals with an intermediate level of concentration 1.2×l0¹⁴ cm^-3, in the case of deviating the current vector from (110) crystallographic axes by 45° (ϕ = 45°). These measurements were done under low electric and magnetic fields. Negative MR was observed at different temperatures. Also sharp anomalous effects of TMR were exhibited when the magnitude of any temperature is increasing or decreasing by a small constant rate (0.9 K). This shows that the behaviour of MR is very strongly affected by any small variation in the temperature when the current passing through the sample does not flow along the axes of symmetry. The two contributions of TMR were calculated. It was found that the distributions of anomalous Δρ/ρ₀ (B¹) terms of MR are more weakly temperature dependent than the normal Δρ/ρ₀ (B²) components of MR. This means that the negative MR is not only temperature, carrier concentration and magnetic field dependent, but is also deviation angle ϕ of current dependent phenomenon. These results may be attributed to the induced Hall field modifying the direction motion of charge carriers in k-space at every small variation in the temperature as a result of deviation of the current vector from the (110) axes by 45°.

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