Abstract. Amorphous and polycrystalline silicon layers are deposited in a LPCVD system at 570? and over 600?C, respectively, and are submitted to a high temperature treatment in N₂ or O₂. The surface morphology and layer structure after deposition and high temperature annealing have been investigated by TEM, UV reflectance and electron diffraction. Annealed and unannealed layers have been doped by POCl₃ predeposilion. It has been established that layers deposited as amorphous are with significantly lower resistivity than those deposited as polycrystalline, regardless of the preliminary annealing.

Full-text: PDF