Abstract. Polycryslalline lead lelluride samples doped with low bismuth concentration (0-1 at.%) have? been obtained. The mobility, thermoelectric power coefficient, Hall coefficient, current carrier concentration, Fermi level and the effective mass of the density of states are studied as a function of the amount of dopant. The results obtained confirm the donor action of bismuth. The increase in Bi concentration up to 0.3 at.% produces a strong effects on the parameters of the materials, whereas the further increase is more weakly expressed on the properties of the samples. The observed behaviour of the studied quantities as a funcfion of the sample composition could be explai?ned in terms of the impurity atom introduced in the cationic sublattice of lead telluride and the formation of electroneutral complexes on the basis of bismuth telluride.

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