Bulg. J. Phys. vol.16 no.1 (1989), pp. 044-048


Electron Transport in Gyrotropic Semiconductors in the Presence of Strong Thermal Fields

A.I. Vakser
Institut of Radiophysics and Electronics, Ukrainian SSR Academy of Sciences, 12 ul. Ak. Proskura, Harkov, USSR
Abstract. Electron transport in semiconductors with Hall's geometry in the presence of strong (transverse to electric current and magnetic field) thermal field is investigated. It is shown, that in definite relationship between the parameters of semiconductor and nonlinear boundary conditions, the electron transport is described by S?N-type voltampere characteristic (VAC). The form of the VAC depends on the value of the external thermal field.

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