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Bulgarian Journal of Physics
Print: 1310-0157 Online: 1314-2666
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RECOGNIZED BY THE EUROPEAN PHYSICAL SOCIETY 
Bulg. J. Phys. vol.24 no.3-4 (1997), pp. 156-162
GaAs/AlxGa1-xAs Heterointerface Properties Assessment by Means of Capacitive Measurements
E.P. Valcheva
Department of Solid State Physics and Microelectronics, University of Sofia, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria
go backDepartment of Solid State Physics and Microelectronics, University of Sofia, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria
Abstract. Heterojunction composition profile is calculated by means of computer simulation of capacitance-voltage analysis of liquid-phase epitaxy grown AlxGa1-xAs/GaAs N-n heterojunctions. Considered is one case often met in practice — the existence of donor type interface states with high concentration, distributed in a box 150 Å wide at the heterointerface and energy level position ascribed to ASGa, antisite related defect.