Bulg. J. Phys. vol.24 no.1-2 (1997), pp. 074-080
Gas Temperature and Density in Interelectrode Space of a Longitudinal Sputtering Diode System
T. Donchev
Instiiute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia, Bulgaria
go backInstiiute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia, Bulgaria
Abstract. An analytical solution for gas temperature distribution in the interelectrode space of a diode sputtering system with fixed electrode temperatures is given. The interelectrode space is separated into two regions: anode and cathode, and the only region with heat sources is supposed to be the cathode region. The heat transfer equations are written for the two regions separately and the values at the common boundary are equalized. For common boundary is chosen the end of the Dark Cathode Space (DCS). The heat transfer coefficient is given in a power law form, and for linearizatioo of the solution a power law transformation for temperature is accomplished. The above treatment allows a new consideration for the wall temperature falls. Since the pressure in the system is constant, the gas density will depend on the gas temperature, and all mean free paths of the moving particles in the interelectrode space will depend on the temperature distribution, moreover all discharge parameters will depend on it. The charge transfer between ions and atoms for heat sources determination are taken into account.

